GaN Gunn Diode for High Frequency and High Power Signal Generation

The new vertical GaN-based Gunn device is made on GaN substrate and able to generate high power microwave signals. By developing special contacting, means of a stable NDR (Negative Differential Resistivity) region could be achieved. Thereby, electrical fields which are considerably higher than the threshold value can be applied without electromigration effects from the contacts.

Further Information: PDF

INNOVECTIS Gesellschaft für Innovations-Dienstleistungen mbH
Phone: +49 (0)69/798-49721

Contact
Dr. Otmar Schöller

Media Contact

info@technologieallianz.de TechnologieAllianz e.V.

All latest news from the category: Technology Offerings

Back to home

Comments (0)

Write a comment

Newest articles

Illustration of RNA modifications contributing to fungal drug resistance

Tackling Life-Threatening Fungal Infections Using RNA Modifications

Importance of RNA modifications for the development of resistance in fungi raises hope for more effective treatment of fungal infections. An often-overlooked mechanism of gene regulation may be involved in…

Image illustrating tense encoding and verb retrieval challenges in aphasia across multiple languages.

Unraveling Aphasia: Global Study Breaks Down Patients’ Struggle with Verb Tenses

An international team of researchers, including scientists from the HSE Centre for Language and Brain, has identified the causes of impairments in expressing grammatical tense in people with aphasia. They discovered…

Extreme weather events and climate resilience in 2024.

Facing the Storm: A Prepped Up Future Against Extreme Climatic and Weather Changes

From the persistent droughts of southern Africa and Central America in the early part of the year to the more recent devastating extreme rainfall in Spain and the deadly Hurricane…